Intrinsic spin Hall effect in graphene: Numerical calculations in a multiorbital model
Intrinsic spin Hall effect in graphene: Numerical calculations in a multiorbital model
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DOI：
10.1103/physrevb.78.121403
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发表时间：
2008-06
影响因子：
3.7
通讯作者：
S. Onari;Y. Ishikawa;H. Kontani;J. Inoue
中科院分区：
文献类型：
--
作者：
S. Onari;Y. Ishikawa;H. Kontani;J. Inoue
我们使用包含原子自旋轨道相互作用的真实多轨道紧束缚模型研究石墨烯中的自旋霍尔效应（SHE）。发现 SHE 是由自旋相关的阿哈罗诺夫-玻姆相引起的。在金属情况下，自旋霍尔电导率 (SHC) 的计算值远小于金属石墨烯实际参数值的量子化霍尔电导率。在绝缘情况下，由于多轨道效应，SHC 的量子化被破坏。目前的研究表明，蜂窝晶格中的 SHE 通过化学掺杂得到增强，例如用硼原子取代碳原子。
We study the spin Hall effect (SHE) in graphene using a realistic multi-orbital tight-binding model that includes the atomic spin-orbit interaction. The SHE is found to be induced by the spin-dependent Aharonov-Bohm phase. In the metallic case, the calculated values for the spin Hall conductivity (SHC) are much smaller than the quantized Hall conductivity for realistic parameter values of metallic graphene. In the insulating case, quantization of the SHC is violated due to the multi-orbital effect. The present study suggests that the SHE in a honeycomb lattice is enhanced by chemical doping, such as the substitution of carbon atoms with boron atoms.