Superior Electrostrictive Strain Behavior of Antiferroelectric (Pb, La)(Zr, Ti)O3 Thick Film Microcantilevers for MEMS Device Applications
Superior Electrostrictive Strain Behavior of Antiferroelectric (Pb, La)(Zr, Ti)O3 Thick Film Microcantilevers for MEMS Device Applications
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用于 MEMS 器件应用的反铁电 (Pb, La)(Zr, Ti)O3 厚膜微悬臂梁的卓越电致伸缩应变行为
DOI：
10.1109/led.2013.2272211
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发表时间：
2013-09-01
影响因子：
4.9
通讯作者：
Zhang, Wendong
中科院分区：
文献类型：
--
作者：
Chou, Xiujian;Guan, Xinfeng;Zhang, Wendong
采用体硅微加工工艺制备了反铁电（AFE） （Pb0.97La0.02）（Zr0.95Ti0.05）O-3 （PLZT）厚膜微悬臂梁。研究了电场诱导下AFE PLZT薄膜明显的电致伸缩应变相变特性。在电压为40 V的方波激励下，与210 kV/cm的fe -铁电相变电场相匹配，650 μ m长悬臂梁上的共振振动速度和尖端偏转分别达到6767 mm/s和45.7 μ m。提出了单位电压诱导尖位移与悬臂长度之比[d(delta)/L/dV]来表示突变响应能力。此外，新型AFE PLZT微悬臂梁表现出10.77/kV的优越值，进一步高于传统的微悬臂梁。微器件在微机电系统各个领域的广泛应用需求将得到满足。
The microcantilevers based on the antiferroelectric (AFE) (Pb0.97La0.02)(Zr0.95Ti0.05)O-3 (PLZT) thick films were fabricated by bulk silicon micromachining process. The conspicuous electrostrictive strain properties with phase transition of the AFE PLZT films induced by electric field were investigated. The resonant vibration velocity and tip deflection on a 650- mu m-long cantilever were up to 6767 mm/s and 45.7 mu m, under the square wave excitation with the voltage of 40 V, matched to the AFE-ferroelectric phase transition electric field of 210 kV/cm. The ratio of induced tip displacement and cantilever length per unit voltage [d(delta)/L/dV] was proposed to show the mutation response ability. In addition, the new AFE PLZT microcantilevers exhibited superior value of 10.77/kV, further higher than the traditional ones. Extensive application requirements for microdevices would be met in various fields of microelectromechanical systems.