Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe3: Competition of direct exchange interaction and superexchange interaction
Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe3: Competition of direct exchange interaction and superexchange interaction
复制标题
二维磁性半导体 CrSiTe3 中磁耦合的应变工程：直接交换相互作用和超交换相互作用的竞争
DOI：
10.1016/j.physleta.2014.10.042
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发表时间：
2015-01-02
影响因子：
2.6
通讯作者：
Shi, Daning
中科院分区：
文献类型：
--
作者：
Chen, Xiaofang;Qi, Jingshan;Shi, Daning
在本文中，我们证明了单层CrSiTe 3是一个本征铁磁半导体的密度泛函理论计算。更重要的是，通过施加弹性拉伸应变可以显著提高铁磁稳定性，这意味着它们在室温下自旋电子器件中的潜在应用。此外，在较小的压缩应变下，发生铁磁-反铁磁转变。其物理机制是直接反铁磁相互作用和间接铁磁超交换相互作用的竞争效应。(C)2014爱思唯尔有限公司版权所有。
In this paper, we demonstrate by the density functional theory calculations that the monolayer CrSiTe3 is an intrinsic ferromagnetic semiconductor. More importantly, ferromagnetic stability can be enhanced significantly by applying an elastic tensile stain, implying their potential applications in spintronic devices at room temperature. In addition, a ferromagnetic-antiferromagnetic transition occurs under the small compression stain. The underlying physical mechanism is attributed to a competition effect of direct antiferromagnetic interaction and indirect ferromagnetic superexchange interaction. (C) 2014 Elsevier B.V. All rights reserved.