A 1-Mbps 1.6-µA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
A 1-Mbps 1.6-µA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
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采用全数字 RF 传输方案的 300 MHz 频段 1 Mbps 1.6 µA 有源 RFID CMOS LSI
DOI：
10.1587/transele.e94.c.1084
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Harada
中科院分区：
文献类型：
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作者：
Kenji Suzuki;M. Ugajin;M. Harada
一个微功率有源RFID LSI与全数字RF发射方案实现了实验10米距离的通信与1 Mbps的数据速率在300 MHz的频带。该集成电路由射频发射器和电源电路组成。RF发射器在没有晶体的情况下生成无线信号。电源电路控制从电池到IC的能量流，并提供RF发射器的间歇操作。该IC采用3.4 V电源供电，功耗为1.6µA，采用0.2 µm CMOS工艺实现，面积为1 mm2。使用硬币大小的电池，IC的估计寿命超过十年。
A micro-power active-RFID LSI with an all-digital RF-transmitting scheme achieves experimental 10-m-distance communication with a 1-Mbps data rate in the 300-MHz frequency band. The IC consists of an RF transmitter and a power supply circuit. The RF transmitter generates wireless signals without a crystal. The power supply circuit controls the energy flow from the battery to the IC and offers intermittent operation of the RF transmitter. The IC draws 1.6µA from a 3.4-V supply and is implemented in a 0.2-µm CMOS process in an area of 1mm2. The estimated lifetime of the IC is over ten years with a coin-size battery.