In situ TEM observations of room temperature dislocation climb at interfaces in nanolayered Al/Nb composites
In situ TEM observations of room temperature dislocation climb at interfaces in nanolayered Al/Nb composites
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DOI：
10.1016/j.scriptamat.2010.04.005
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发表时间：
2010-08-01
影响因子：
6
通讯作者：
Zhang, X.
中科院分区：
文献类型：
--
作者：
Li, Nan;Wang, J.;Zhang, X.
利用原位纳米压痕技术研究了Al/Nb多层膜中位错界面的相互作用。观察到位错优先存储在界面处，而不是层内。位错的恢复被观察到发生通过爬在接口。位错的快速攀移归因于界面处较高的空位扩散系数和空位浓度。在接口，0.12 eV的空位形成能量，从实验测得的爬升率估计，被发现显着低于在散装。由Elsevier Ltd.代表Acta Materialia Inc.出版。
Using in situ nanoindentation, we investigated dislocation interface interactions in Al/Nb multilayers. Preferential storage of dislocations at interfaces, as opposed to within layers, was observed. Recovery of dislocations was observed to occur through climb in the interfaces. The rapid climb of dislocations is ascribed to high vacancy diffusivity and vacancy concentration in the interfaces. The vacancy formation energy at interfaces, 0.12 eV, as estimated from the experimentally measured climb rates, was found to be significantly lower than in the bulk. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.