Structural, magnetic, and transport properties of "Zn,V…Te semiconductors
Structural, magnetic, and transport properties of "Zn,V…Te semiconductors
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DOI：
10.1063/1.2151808
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发表时间：
2006-04
影响因子：
3.2
通讯作者：
Weigang Wanga;Tao Zhu
中科院分区：
文献类型：
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作者：
Weigang Wanga;Tao Zhu
钒掺杂 ZnTe 预计将成为高居里温度铁磁半导体的候选材料之一 [K. Sato 和 H. Katayama-Yoshida，Semicond。科学。技术。 17, 367 (2002)]。在本文中，我们报道了磁控溅射制备的（Zn，V）Te 薄膜的结构、磁性和输运特性。样品是在高温下在 GaAs 和热氧化硅衬底上制造的。在 GaAs 衬底上可以实现取向样品 (100)，而在 Si 衬底上只能观察到多晶样品。 X 射线衍射 (XRD) 和透射电子能谱 (TEM) 显示 (Zn,V)Te 薄膜中没有磁性沉淀。磁化强度测量表明，取向样品在5 K时呈顺磁性，而Si衬底上的薄膜在5 K时表现出弱铁磁性。磁阻符号(MR=[R(H)-R(0)]∕R(0))随温度逐渐由负变为正，高温下的正磁阻表现出H2依赖性，表明普通磁阻...
Vanadium-doped ZnTe has been predicted to be one of the candidates for ferromagnetic semiconductors with a high Curie temperature [K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002)]. In this paper, we report the structural, magnetic, and transport properties of (Zn,V)Te films prepared by magnetron sputtering. Samples were fabricated on both GaAs and thermally oxidized silicon substrate at elevated temperature. Oriented sample (100) can be achieved on GaAs substrates and only polycrystalline samples are observed on Si substrates. X-ray diffraction (XRD) and transmission electron spectroscopy (TEM) show no magnetic precipitates in the (Zn,V)Te film. The magnetization measurement shows that the oriented sample is paramagnetic at 5 K, while films on Si substrate shows weak ferromagnetism at 5 K. The sign of magnetoresistance (MR=[R(H)-R(0)]∕R(0)) gradually changes from negative to positive with temperature, and positive MR at high temperatures shows H2 dependence, indicating ordinary MR ...