Existence of extinction temperature in WSix film growth from WF6 and SiH4: An indication of the role played by radical chain reactions
Existence of extinction temperature in WSix film growth from WF6 and SiH4: An indication of the role played by radical chain reactions
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WF6 和 SiH4 生长 WSix 薄膜时存在消光温度：表明自由基链式反应所起的作用
DOI：
10.1063/1.108600
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发表时间：
1993
影响因子：
4
通讯作者：
S. Yamaguchi
中科院分区：
文献类型：
--
作者：
Takeyasu Saito;Y. Shimogaki;Y. Egashira;H. Komiyama;Y. Yuyama;K. Sugawara;S. Nagata;K. Takahiro;S. Yamaguchi
使用管式反应器系统，在80至390 °C的低温范围内进行低压化学气相沉积（LPCVD）以从WF 6和SiH 4沉积存款硅化钨膜（WSix）。沉积速率的急剧下降发生在消光温度Tex。反应器尺寸在4至22 mmφ范围内的增加使Tex从140 ° C降低至80 °C。在Tex以上，成膜物质的粘附概率（η）和WSix的膜组成x不依赖于反应器直径。Tex对反应器直径的依赖性以及Tex以上的η和x与反应器直径的独立性表明自由基链过程主导CVD-WSix过程以形成成膜物质。
Low pressure chemical vapor deposition (LPCVD) was carried out to deposit tungsten silicide films (WSix) from WF6 and SiH4 in a low temperature range from 80 to 390 °C, using a tubular reactor system. Drastic decrease of the deposition rate occurred at an extinction temperature Tex. Increase of the reactor size in the range from 4 to 22 mmφ decreased Tex from 140 to 80 °C. Above Tex, the sticking probability of the film forming species (η) and the film composition, x of WSix , did not depend on the reactor diameter. Dependence of Tex on the reactor diameter and independence of η and x above Tex from the reactor diameter indicates that a radical chain process dominates CVD‐WSix process to form film forming species.