Growth of Cerium Oxide Buffer Layers and Superconducting thin films on Silicon
Growth of Cerium Oxide Buffer Layers and Superconducting thin films on Silicon
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硅上氧化铈缓冲层和超导薄膜的生长
DOI：
10.1557/proc-275-501
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
W. Andboydi
中科院分区：
文献类型：
--
作者：
S. Amirhaghi;F. Beech;V. Craciun;A. Sajjadi;M. Vickers;S. Tarling;P. Barnes;W. Andboydi
使用激光烧蚀沉积技术在 Si 和玻璃基板上生长了 CeO 2 薄膜。对沉积在玻璃上的薄膜的 X 射线衍射测量表明，它们与在覆盖有天然氧化物的硅上生长的薄膜相同。这一证据支持这样一种观点：化学效应而非晶体效应限制了薄膜的生长。在硅上生长的薄膜的晶体质量随着远离非晶层的薄膜厚度的增加而提高。低冷却速率以及减小的膜厚度可有效避免微裂纹的形成。表面形态取决于激光波长以及氧分压。 YBa 2 Cu 3 O 7δ 薄膜可以很容易地在CeO 2 /Si 上生长，呈现c 轴取向，而BiSrCaCuO (2212) 在CeO 2 /Si 上生长导致两层薄膜相互混合。
Films of CeO 2 have been grown on Si and glass substrates using the laser ablation deposition technique. X-ray diffraction measurements for the films deposited on glass indicated that they are the same as films grown on Si covered with the native oxide. This evidence supports a picture in which chemical rather than crystal-lographic effects constrain the film growth. The crystal quality for films grown on Si was shown to improve with increasing film thickness away from the amorphous layer. Low cooling rates as well as reduced film thickness were effective in avoiding the formation of micro-cracks. The surface morphology was shown to be dependent on the laser wave-length as well as the oxygen partial pressure. Thin films of YBa 2 Cu 3 O 7δ could easily be grown on CeO 2 /Si showing c-axis orientation, whereas the growth of BiSrCaCuO (2212) on CeO 2 /Si resulted in the two films mixing with each other.