Silicon emitter for field desorption mass spectrometry
Silicon emitter for field desorption mass spectrometry
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用于场解吸质谱分析的硅发射器
DOI：
10.1021/ac50037a025
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发表时间：
1979
影响因子：
7.4
通讯作者：
I. Katakuse
中科院分区：
文献类型：
--
作者：
T. Matsuo;H. Matsuda;I. Katakuse
研制了一种用于场电离解吸质谱分析的新型离子发射器。在60µ（直径）钨（或钽）线上生长的非常细的硅须可以用作强而高效的发射器。成长的过程如下。在60µ钨丝上通过蒸发沉积少量的金。包金钨丝经真空室预热后，在硅烷气体（SiH4 5%+ Ar 95%）中以180 Torr的压力直流电加热。硅晶须大约在1分钟内生长。在晶须生长过程中，不需要预处理、仔细控制和高压供电。测量了硅发射体在FI和FD工况下的总电离效率。FI操作中丙酮的电离效率为5 × 10”®A/Torr， FD操作中AMP的电离效率为1.4 × 10”12 C/pg。对其它试验样品的结果也作了描述。
A new ion emitter for field ionization and desorption mass spectrometry has been developed. Very fine silicon whiskers grown on a 60-µ (diameter) tungsten (or tantalum) wire can be used as a strong and efficient emitter. The process of growth is as follows. A small amount of gold Is deposited by evaporation on 60-µ tungsten wire. After being preheated in a vacuum chamber, the gold coated tungsten wire is heated by direct electric current in silane gas (SiH4 5%+ Ar 95%) at a pressure of 180 Torr. Silicon whiskers grow in about 1 min. Pre-treatment, careful control, and high voltage supply during the whisker growth are unnecessary. The total ionizing efficiencies of silicon emitters in FI operation and in FD operation have been measured. The ionization efficiency for acetone in FI operation was 5 X 10 “® A/Torr and that for AMP in FD operation was 1.4 X10 “12 C/pg. The results for other test samples are also described.