Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
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DOI：
10.1143/jjap.45.2502
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发表时间：
2006-04
影响因子：
1.5
通讯作者：
N. Okada;Naoki Fujimoto;T. Kitano;G. Narita;M. Imura;K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;Kenji Shimono;T. Noro;T. Takagi;A. Bandoh
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文献类型：
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作者：
N. Okada;Naoki Fujimoto;T. Kitano;G. Narita;M. Imura;K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;Kenji Shimono;T. Noro;T. Takagi;A. Bandoh
在1200℃以上的温度下，在镀铝蓝宝石表面进行了AlGaN的金属有机气相外延生长。在低温生长条件下，合金成分由金属有机源Ga和Al的流动速率决定，而在低温生长条件下，AlGaN的固体成分受热力学的影响较大。
The metalorganic vapor phase epitaxial (MOVPE) growth of AlGaN on AlN-coated sapphire at a temperature higher than 1,200 °C was carried out. Compared with that at a low-temperature growth regime in which alloy composition is determined by the flow rates of metalorganic Ga and Al sources, the solid composition of AlGaN is found to be strongly affected by thermodynamics.