Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques
Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques
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使用面控制技术可视化 HVPE 生长的 GaN 中的位错行为
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
K. Tadatomo
中科院分区：
文献类型：
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作者：
T. Matsubara;Shin Goubara;Kota Yukizane;Ryo Inomoto;N. Okada;K. Tadatomo
我们使用facet控制技术在氢化物-气相-外延（HVPE）生长的GaN的整个表面上实现了104-105 cm−2的低螺纹位错（TD）密度。该方法中使用的SiO2条纹掩模模式具有10 μm的掩模区域和200 μm宽的窗口，用于选择性区域生长。虽然这种氮化镓层是使用图案掩膜生长的，但在氮化镓层的整个表面上没有观察到集中的位错。我们还可视化了整个选择性生长GaN层区域的独特位错行为。利用倾斜抛光试样进行三维阴极发光成像，获得了HVPE生长GaN的螺纹位错和光面位错的三维分布。
We achieve low threading dislocation (TD) density in the order of 104–105 cm−2 over the whole surface of hydride‐vapor‐phase‐epitaxy (HVPE)‐grown GaN, using a facet controlling technique. The SiO2‐striped mask patterns used in this method have 10 μm masking regions and 200 μm‐wide windows for selective area growth. Although this GaN layer was grown using patterned masks, no concentration of dislocations was observed over the whole surface of the GaN layer. We also visualized the unique dislocation behavior over the entire selectively grown GaN layer area. Three‐dimensional distributions of dislocation densities for both the threading and in‐plane dislocations of the HVPE‐grown GaN were obtained by the three dimensional cathodoluminescence imaging using inclined polished specimens.