Role of interface layers and localized states in TiAl-based ohmic contacts to p-type 4H-SiC
Role of interface layers and localized states in TiAl-based ohmic contacts to p-type 4H-SiC
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DOI：
10.1007/s11664-006-0078-0
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发表时间：
2007-04-01
影响因子：
2.1
通讯作者：
Brillson, L. J.
中科院分区：
文献类型：
--
作者：
Gao, M.;Tsukimoto, S.;Brillson, L. J.
我们研究了界面反应、功函数变化和退火Ti/Al欧姆接触对p型4H-SiC的局域态的作用。在近界面区发现Al不存在。排除了顶部SiC层中Al扩散导致p掺杂的可能性。与SiC直接接触层Ti3SiC2的功函数介于Ti和p-SiC之间，导致肖特基势垒高度显著降低。在近界面SiC中观察到反应诱导的界面态，这可能进一步降低势垒高度并导致欧姆接触的形成。
We have investigated the roles of interfacial reaction, work function variation, and localized states of annealed Ti/Al ohmic contacts to p-type 4H-SiC. The Al was found to be absent in the near interface region. The possibility of additional p-doping by Al indiffusion in the top SiC layer was ruled out. The work function of Ti3SiC2, the direct contact layer to SiC, was determined to be intermediate between Ti and p-SiC, leading to a considerably lowered Schottky barrier height. Reaction-induced interfacial states were observed in the near-interface SiC, which may further reduce the barrier height and cause the formation of ohmic contact.