Quantum beats in semiconductor quantum dots
Quantum beats in semiconductor quantum dots
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DOI：
10.1016/j.jlumin.2004.01.038
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发表时间：
2004-06
影响因子：
3.6
通讯作者：
Y. Masumoto;I. Ignatiev;K. Nishibayashi;T. Okuno;S. Verbin;I. Yugova
中科院分区：
文献类型：
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作者：
Y. Masumoto;I. Ignatiev;K. Nishibayashi;T. Okuno;S. Verbin;I. Yugova
本文报道了在半导体量子点中观察到的四种发光量子拍(QB)。对于应变感生的GaAs量子点，观测到了纵向磁场作用下塞曼分裂亮重空穴激子的量子背散射和横向磁场作用下电子自旋Larmor进动产生的量子背散射。在倾斜磁场中中和的自组装InP量子点中，观察到了另一种介于亮和暗重空穴激子之间的QB。在没有磁场的情况下，在只有一个过剩电子的带负电荷的InP量子点中观察到了三重子量子点。QBS的分析给出了交换能的精细能量分裂和激子、电子和空穴的塞曼分裂，精度为10μeV，尽管有20-50 meV的宽非均匀线宽。
This paper reports observation of four kinds of luminescence quantum beats (QBs) in semiconductor quantum dots (QDs). QBs of Zeeman-split bright heavy-hole excitons under a longitudinal magnetic field and QBs coming from the electron spin Larmor precession under a transverse magnetic field were observed for strain-induced GaAs QDs. Another type of QB between bright and dark heavy-hole excitons was observed in neutralized self-assembled InP QDs in a tilted magnetic field. Trionic QBs were observed in negatively charged InP QDs possessing only one excess electron in the absence of the magnetic field. Analysis of QBs gives us fine energy splittings of exchange energy and Zeeman splittings of exciton, electron and hole with an accuracy of 10μeV despite the broad inhomogeneous linewidth of 20–50meV.