A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFET's
A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFET's
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DOI：
10.1109/16.824742
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发表时间：
2000-03-01
影响因子：
3.1
通讯作者：
Amarasinghe, NV
中科院分区：
文献类型：
--
作者：
Çelik-Butler, Z;Vasina, P;Amarasinghe, NV
Random telegraph signals (RTS) have been measured in the drain to source voltage of W X L = 0.97 x 0.15 mu m(2) medium-doped drain (MDD) n-MOSFET's. The depth of the trapping tenter in the oxide is found from the gate voltage dependence of the emission and capture times. The difference in the drain voltage dependence of the capture and emission times between the forward and reverse modes is utilized to find the position of the trap in the channel with respect to the source.
