Study of the dynamics of point defects at Si(111)-7×7 surfaces with scanning tunneling microscopy
Study of the dynamics of point defects at Si(111)-7×7 surfaces with scanning tunneling microscopy
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用扫描隧道显微镜研究Si(111)-7×7表面点缺陷的动力学
DOI：
10.1116/1.581393
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
T. Tsong
中科院分区：
文献类型：
--
作者：
I. Hwang;R. Lo;T. Tsong
用高温扫描隧道显微镜研究了Si（111）-7 7表面的几种点缺陷。一种特殊类型的缺陷，我们称之为赝空位，在两个隧穿极性中都是暗的。它们不是真实的空位，并且它们既不是由硅表面原子与残余气体的反应引起的，也不是由于来自Si衬底的掺杂剂。在Si（111）-7 7上，我们可以在高温下产生单个空位或空位团，发现这些空位团在一段时间后被填充。此外，我们还研究了从室温到某些高温下，O_2、CH_4、C_2H_4和H在清洁Si（111）-7 7表面上的吸附所引起的缺陷。在升高的温度下吸附产生的物质通常不同于在室温下吸附产生的物质。此外，我们可以观察到有趣的动力学行为，如在高温下的网站跳跃和解吸。在这项工作中，我们发现，不同的表面缺陷表现出非常不同的动态行为…
With a high-temperature scanning tunneling microscope, we study several kinds of point defects at Si(111)-7×7 surfaces. A special type of defect, which we call pseudo-vacancy, appears dark in both tunneling polarities. They are not real vacancies, and they are neither caused by reaction of silicon surface atoms with residual gases, nor due to dopants coming from the Si substrates. On Si(111)-7×7, we can create single vacancies or vacancy clusters at elevated temperatures, which are found to be filled up after a period of time. In addition, we study defects caused by adsorption of O2, CH4, C2H4, and H on clean Si(111)-7×7 surfaces from room temperature to some elevated temperatures. The species produced for adsorption at elevated temperatures are often different from those for adsorption at room temperature. Also, we can observe interesting dynamic behavior, such as site hopping and desorption, at high temperatures. In this work, we find that different surface defects exhibit very different dynamic behavio...