Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient
Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient
复制标题
(0001)4H-SiC在臭氧混合氧气环境下高温热氧化
DOI：
10.1063/1.1598621
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
K. Arai
中科院分区：
文献类型：
--
作者：
R. Kosugi;K. Fukuda;K. Arai
原子氧氧化法已被开发用于SiC金属氧化物半导体（MOS）器件的栅氧化层形成。将臭氧（O3）-混合的氧气（O2）引入冷壁氧化炉中，其中通过O3分子在升高的样品温度下的热分解形成基态的原子氧。氧化物在O3混合气体中的生长速率在约666.4 Pa和950-1200 °C下显示出最大值，而纯O2气体中的速率在低于6664.5 Pa时可忽略不计。 采用原子氧制备的MOS电容器的界面陷阱密度（Dit）强烈依赖于氧化温度;与950 °C相比，1200 °C下的氧化导致Dit显著降低。
The method of oxidation by atomic oxygen has been developed for gate oxide formation in SiC metal–oxide–semiconductor (MOS) devices. Ozone (O3)–admixed oxygen (O2) gas is introduced into the cold-wall oxidation furnace, where atomic oxygen in a ground state is formed by thermal decomposition of O3 molecules at elevated sample temperatures. The growth rate of oxide in the O3-admixed gas shows a maximum at around 666.4 Pa and 950–1200 °C, whereas the rate in pure O2 gas is negligible below 6664.5 Pa. Interface trap density (Dit) of the MOS capacitors fabricated using atomic oxygen strongly depends on the oxidization temperature; oxidation at 1200 °C results in significant reduction of Dit in comparison with that at 950 °C.