Microwave properties of epitaxial (111)-oriented Ba0.6Sr0.4TiO3 thin films on Al2O3(0001) up to 40 GHz
Microwave properties of epitaxial (111)-oriented Ba0.6Sr0.4TiO3 thin films on Al2O3(0001) up to 40 GHz
复制标题
DOI：
10.1063/1.3478015
复制
发表时间：
2010-10-18
影响因子：
4
通讯作者：
Dong, Xianlin
中科院分区：
文献类型：
--
作者：
Yang, Lihui;Ponchel, Freddy;Dong, Xianlin
钙钛矿 Ba0.6Sr0.4TiO3 (BST) 薄膜通过射频磁控溅射在 Al2O3(0001) 基底上生长，无需/插入超薄 TiOx 籽晶层。 X射线衍射和极图研究表明，具有TiOx层（12埃厚）的薄膜沿（111）方向高度取向，并表现出良好的BST（111）平行于Al2O3（0001）的面内关系。高频介电测量表明，复介电常数 (epsilon = epsilon' - j epsilon '') 可以通过指数为 0.40 的 Curie-von Scheidler 色散很好地描述。由此产生的外延 BST 薄膜表现出高介电常数（类似于 428）和可调谐性（类似于 41%，在 300 kV/cm 和 40 GHz 下），并且它们的微波特性（1-40 GHz）可能适合可调谐器件。 (C) 2010 年美国物理研究所。 [号码：10.1063/1.3478015]
Perovskite Ba0.6Sr0.4TiO3 (BST) thin films have been grown on Al2O3(0001) substrates without/with inserting an ultrathin TiOx seeding layer by rf magnetron sputtering. X-ray diffraction and pole figure studies reveal that the film with the TiOx layer (12-angstrom-thick) is highly oriented along the (111) direction and exhibits a good in-plane relationship of BST(111)parallel to Al2O3(0001). The high frequency dielectric measurements demonstrate that the complex permittivity (epsilon = epsilon' - j epsilon '') is well described by a Curie-von Scheidler dispersion with an exponent of 0.40. The resulting epitaxial BST films show high permittivity (similar to 428) and tunability (similar to 41%, at 300 kV/cm and 40 GHz) and their microwave properties (1-40 GHz) potentially could be made suitable for tunable devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3478015]