GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
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DOI：
10.1063/1.2974795
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发表时间：
2008-08
期刊：
Applied Physics Letters
影响因子：
4
通讯作者：
S. Suchalkin;Seungyong Jung;G. Kipshidze;L. Shterengas;T. Hosoda;D. Westerfeld;D. Snyder;G. Belenky
S. Suchalkin;Seungyong Jung;G. Kipshidze;L. Shterengas;T. Hosoda;D. Westerfeld;D. Snyder;G. Belenky
中科院分区：
物理与天体物理2区
文献类型：
--
作者：
S. Suchalkin;Seungyong Jung;G. Kipshidze;L. Shterengas;T. Hosoda;D. Westerfeld;D. Snyder;G. Belenky

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在GaSb衬底上生长了具有AlInGaAsSb势垒和InGaAsSb应变量子阱的中红外(λ≈3-3.5μm)发光二极管。器件在室温下产生了0.7 mW的准连续发射功率，在T=80K时产生了2.5 mW的准连续发射功率。
Mid-IR (λ≈3–3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.