1THz one-sided directional slot antenna on a chip connected with InAs HEMT
1THz one-sided directional slot antenna on a chip connected with InAs HEMT
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DOI：
10.1117/12.2543439
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发表时间：
2020-03
期刊：
影响因子：
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通讯作者：
H. Kanaya;R. Takigawa;Kohei Tasaki;K. Kato;T. Asano
中科院分区：
文献类型：
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作者：
H. Kanaya;R. Takigawa;Kohei Tasaki;K. Kato;T. Asano
太赫兹 (THz) 范围介于红外光和毫米波或微波辐射之间。此外，太赫兹波会被金属物体高度衰减或对分子间结合力敏感。因此，利用太赫兹范围进行成像受到安全、制造、化学成像等领域的广泛关注。在我们的研究中，将开发由砷化铟（InAs）高电子迁移率晶体管（HEMT）和芯片上的单侧定向缝隙天线组成的太赫兹探测器。在本文中，我们重点关注芯片上的天线。所提出的天线具有三层，即顶部天线金属、介电基板（BCB、苯并环丁烯）和底部浮动金属层。顶部天线金属上有共面 (CPW) 馈线和槽。通过优化底部浮置金属层的尺寸，可以抑制朝向背面的辐射。 CPW 馈线连接到 InAs HEMT 上的栅电极。为了最大化从天线到 InAs HEMT 的接收太赫兹信号，使用 3D 电磁模拟器来表征天线和栅极输入阻抗。已经发现，当栅电极的输入阻抗从10欧姆变为50欧姆时，栅电极处产生的电压增加了三倍。天线是通过传统的光刻工艺制造的。带有探针焊盘的顶部金属上的辐射金属尺寸为 290 μm x 210 μm。 0.93 THz 时测得的天线增益为 5.57 dBi，而仿真中的天线增益为 1 THz 时为 5.96 dBi。
Terahertz (THz) range holds between infrared light and millimeter wave or microwave radiation. Moreover, THz waves is highly attenuated by the metal object or sensitive to an inter-molecular binding force. Therefore, imaging using THz range is attracted much attention for security, manufacturing, chemical imaging, and so on. In our research, the THz detector composed of Indium arsenide (InAs) high electron mobility transistor (HEMT) and one-sided directional slot antenna on a chip will be developed. In this paper, we focused on the antenna on a chip. The proposed antenna has three layers, namely, top antenna metal, dielectric substrate (BCB, benzocyclobutene) and bottom floating metal layer. There are a coplanar (CPW) feed lines and slots on the top antenna metal. By optimizing the size of the bottom floating metal layer, the radiation toward the back side is suppressed. The CPW feed line is connected the gate electrode on the InAs HEMT. In order to maximize the receiving THz signal form the antenna to InAs HEMT, antenna and gate input impedance is characterized by using the 3D electromagnetic simulator. It has been found that when the input impedance of the gate electrode changes from 10 ohms to 50 ohms, the voltage generated at the gate electrodes is tripled. The antenna was fabricated by the conventional photolithography process. The size of the radiation metal is 290 μm x 210 μm on the top metal with probe pads. The measured antenna gain is 5.57 dBi at 0.93 THz compared with the 5.96 dBi antenna gain at 1 THz from the simulation.