Patterned media write designs
Patterned media write designs
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图案化媒体写入设计
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
G. F. Hughes
中科院分区：
文献类型：
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作者：
G. F. Hughes
分析了100个1gbit /in/sup / /垂直和水平图案介质的记录设计方案，以1gbit /s的速度写入一个和两个磁头。作为图形介质理论潜力的系统分析的一部分，计算了比特写入场、干扰场和开关速度，以解决传统“无特征”连续薄膜介质可能存在的物理限制（包括热衰减、非线性跃迁和跃迁噪声，以及接近已知材料极限的高写入极M/sub /要求）。根据晶体各向异性，假设图形介质“比特”垂直或水平取向，并且小于100 nm以允许单畴，1/2 ns开关。M/sub s/H/sub c/V/kT>500，意味着热稳定性，包括介质退磁和写入头剩余场，在当前磁头/介质磁要求下，面密度可扩展性超过100 Gbit/in/sup 2/，接近一个数量级。
Recording design alternatives are analyzed for 100 1 Gbit/in/sup 2/ vertical and horizontal patterned media, written at 1 Gbit/s with one and two pole heads. Bit write fields, disturb fields, and switching speeds are calculated as part of a system analysis of the theoretical potential of patterned media to address possible physics limits for conventional "featureless" continuous film media (these include thermal decay, nonlinear transition shift and transition noise, and high writer pole M/sub s/ requirements near the limit of known materials). The patterned media "bits" are assumed oriented vertically or horizontally by crystalline anisotropy, and smaller than 100 nm to allow single-domain, 1/2 ns switching. M/sub s/H/sub c/V/kT>500, implying thermal stability including media demagnetization and write head remanent fields, are nearly an order of magnitude areal density extensibility beyond 100 Gbit/in/sup 2/ with present-day head/media magnetic requirements.