Electronic Properties of Ga(In)NAs Alloys
Electronic Properties of Ga(In)NAs Alloys
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Ga(In)NAs 合金的电子性能
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
B. Monemar
中科院分区：
文献类型：
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作者：
I. Buyanova;Weimin Chen;B. Monemar
主要从实验的角度对Ga（In）NAs三元和四元合金的电子性质的现有知识进行了简要的回顾。讨论的重点是低N组分（<10%）的Ga（In）NAs，其中已经做了大量的实验工作。重要的基本电子性质的材料系统进行了分析，重点是在合金和氮诱导的导带的电子结构的修改的性质的巨大的带隙弯曲。目前的知识的关键材料参数，相关的器件应用，如电子有效质量，复合过程和Ga（In）NAs/GaAs异质结的能带排列，也进行了审查。
A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.