NEW EFFICIENT DESIGNS FOR XOR AND XNOR FUNCTIONS ON THE TRANSISTOR LEVEL
NEW EFFICIENT DESIGNS FOR XOR AND XNOR FUNCTIONS ON THE TRANSISTOR LEVEL
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DOI：
10.1109/4.303715
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发表时间：
1994-07-01
影响因子：
5.4
通讯作者：
FENG, WS
中科院分区：
文献类型：
--
作者：
WANG, JM;FANG, SC;FENG, WS
提出了在晶体管级实现异或和异或功能的两种新方法。第一种方法使用非互补信号输入和最少数量的晶体管。另一种方法提高了先前方法的性能，但使用了两个以上的晶体管。后者使用与[1]相同数量的晶体管，但具有更高的驱动能力。在SUN sparc2工作站上，用HSPICE对这两种方法进行了全面的仿真。
Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. The latter uses the same number of transistors as [1] but with more driving capability additionally. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation.