GaN on sapphire mesa technology

GaN on sapphire mesa technology
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蓝宝石台面上的 GaN 技术

DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
E. Kohn
E. Kohn
中科院分区：
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文献类型：
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作者：
P. Herfurth;Yakiv Men;R. Rösch;J. Carlin;N. Grandjean;E. Kohn

文献摘要

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相似文献

这篇文章报道了类似于绝缘体上硅技术的用于晶格匹配的InAlN/GaN HEMT的蓝宝石上GaN台面技术。在500 nm和100 nm之间的超薄缓冲层已经被深梅萨蚀刻到衬底，以避免器件之间通过缓冲层的串扰，并在有源器件区域之外提供完全透明性（对于生物化学传感器应用特别感兴趣）。0.25μm栅极长度的HEMT器件特性适中，但缓冲层厚度低至200 nm时基本相似。100 nm缓冲层上的器件仍然难以复制。Ion/Ioff高达109，亚阈值斜率降至90 mV/dec（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: NS > 1.6 x 1013 cm-2, Rsh < 600 Ω/□. 0.25 µm gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. Ion/Ioff was up to 109 and sub-threshold slopes down to 90 mV/dec (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)