Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
复制标题
柱状 InAs/GaAs 量子点产生低阈值电流和高输出功率的激光
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
H. Ishikawa
中科院分区：
文献类型：
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作者：
K. Mukai;Y. Nakata;H. Shoji;M. Sugawara;K. Ohtsubo;N. Yokoyama;H. Ishikawa
采用新型量子点的激光器实现了低阈值电流和高输出功率。通过在GaAs衬底上交替提供少量的InAs和GaAs，可以自组装出具有高均匀性和高发射效率的点。在室温下，激光器的阈值电流为5.4 mA，电流密度为160A/cm/sup 2/，输出功率为110 mW。
Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm/sup 2/, and an output power of 110 mW at room temperature.