Adsorbed state of benzene on the Si(100) surface: Thermal desorption and electron energy loss spectroscopy studies
Adsorbed state of benzene on the Si(100) surface: Thermal desorption and electron energy loss spectroscopy studies
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苯在 Si(100) 表面的吸附态：热脱附和电子能量损失光谱研究
DOI：
10.1063/1.461498
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发表时间：
1991
影响因子：
4.4
通讯作者：
M. Nishijima
中科院分区：
文献类型：
--
作者：
Y. Taguchi;M. Fujisawa;T. Takaoka;T. Okada;M. Nishijima
用热脱附谱(TDS)和高分辨电子能量损失谱(EELS)研究了90K和300K下苯在Si(100)表面的吸附状态。在300K时，苯在Si(100)面上非解离地化学吸附，其饱和覆盖度分数相当于每个表面硅原子0.27个苯分子。结果表明，化学吸附的苯与两个相邻的硅原子成双σ键，饱和了硅上的悬挂键。在90K时，除了化学吸附层外，还形成了多层物理吸附的苯分子。多层膜由亚稳过渡层(α2)和体相多层膜(α3)组成。这些结果与苯在Si(111)(7×7)表面上的结果明显不同，并讨论了晶面专一性的来源。
The adsorbed state of benzene on the Si(100) surface at 90 and 300 K has been investigated by the use of thermal desorption spectroscopy (TDS) and high resolution electron energy loss spectroscopy (EELS). Benzene is chemisorbed nondissociatively on Si(100) at 300 K, and the fractional saturation coverage corresponds to 0.27 benzene molecule per surface Si atom. It is proposed that chemisorbed benzene is di‐σ bonded to two adjacent Si atoms saturating the dangling bonds on Si(100). At 90 K, physisorbed multilayers of benzene molecules are formed in addition to the chemisorbed layer. The multilayers consist of the metastable transition layer (α2) and ‘‘bulk’’ multilayers (α3). These results are markedly different from those of benzene on the Si(111)(7×7) surface, and the origin of the crystal‐face specificity is discussed.