Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
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DOI：
10.1016/j.nima.2018.07.044
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发表时间：
2017-12
期刊：
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
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通讯作者：
H. Augustin;N. Berger;S. Dittmeier;J. Hammerich;A. Herkert;L. Huth;D. Immig;J. Kroger;F. Meier;I. Peri'c;A. Perrevoort;A. Schoning;D. Bruch;D. Wiedner
H. Augustin;N. Berger;S. Dittmeier;J. Hammerich;A. Herkert;L. Huth;D. Immig;J. Kroger;F. Meier;I. Peri'c;A. Perrevoort;A. Schoning;D. Bruch;D. Wiedner
中科院分区：
其他
文献类型：
--
作者：
H. Augustin;N. Berger;S. Dittmeier;J. Hammerich;A. Herkert;L. Huth;D. Immig;J. Kroger;F. Meier;I. Peri'c;A. Perrevoort;A. Schoning;D. Bruch;D. Wiedner

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为了实现轻薄、快速、高集成度的像素传感器，提出了基于180nm HV-CMOS工艺的高压单片有源像素传感器（HV-MAPS）。MuPix7原型机采用商用AMS H18工艺制造，具有完全集成的片上读出功能，即击中数字化、零抑制和数据序列化。MuPix7是第一个全单片HV-CMOS像素传感器，已经在HL-LHC等高辐射环境中进行了使用测试。我们展示了MuPix7原型在中子（高达5.0× 10 15 n当量/厘米2）和24 GeV质子（高达7.8× 10 15质子/厘米2）辐照下的实验室和测试光束测量结果，并将其性能与未辐照传感器进行了比较。在传感器温度约为8°C时，在噪声率低于每像素40 Hz时，测量到的效率≥90%，影响高达1.5× 10 15 n eq/ cm2。在所有测试设置和传感器下，即使在最高的辐照影响下，也测量到优于22 ns的时间分辨率，用高斯σ表示。数据传输速率为1.25 Gbit/s，片上锁相环功能完全正常。
Abstract High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, ie hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0× 10 15 n eq/cm 2) and 24 GeV protons (up to 7.8× 10 15 protons/cm 2) and compare the performance with non-irradiated sensors. At sensor temperatures of about 8° C efficiencies of≥ 90% at noise rates below 40 Hz per pixel are measured for fluences of up to 1.5× 10 15 n eq/cm 2. A time resolution better than 22 ns, expressed as Gaussian σ, is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.