Half-metallic nature of the low-temperature grown Co2MnSi films on SrTiO3
Half-metallic nature of the low-temperature grown Co2MnSi films on SrTiO3
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DOI：
10.1016/j.jallcom.2020.155571
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发表时间：
2021-02
影响因子：
6.2
通讯作者：
K. Kudo;S. Yamada;M. Yafuso;T. Kimura;V. Lazarov;K. Hamaya
中科院分区：
文献类型：
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作者：
K. Kudo;S. Yamada;M. Yafuso;T. Kimura;V. Lazarov;K. Hamaya
实验表明，在350℃左右的温度下，用分子束外延技术可以在SrTiO3(001)衬底上生长半金属Co2MnSi薄膜。尽管Co2MnSi薄膜的生长温度相对较低，但仍获得了L 21有序结构、高达∼5.0μB/fu的饱和磁矩和显示半金属性质的各向异性磁阻负号。对于350°C生长的Co2MnSi薄膜，估算了低的吉尔伯特阻尼常数∼0.0035，这意味着高的自旋极化。这项研究将为开发由Co2MnSi和钙钛矿氧化物组成的新型自旋电子应用开辟道路，如高性能的界面多铁系统和高效的自旋-电荷转换系统。
We experimentally show that half-metallic Co 2 MnSi films can be grown on SrTiO 3 (001) at around 350° C by molecular beam epitaxy. Despite relatively low-temperature grown Co 2 MnSi films, L 2 1-ordered structures, high saturation magnetic moments of∼ 5.0 μ B/fu, and the negative sign of the anisotropic magnetoresistance (AMR) indicating half-metallic nature are obtained. For the 350° C-grown Co 2 MnSi films, a low Gilbert damping constant of∼ 0.0035, implying the high spin polarization, is evaluated. This study will open a way for developing novel spintronic applications consisting of Co 2 MnSi and perovskite oxides such as high-performance interfacial multiferroic systems and efficient spin-to-charge conversion systems.