The Effect of SiC-MOSFET Characteristics on the Performance of Dielectric Barrier Discharge Plasma Actuators with Two-Stroke Charge Cycle Operation
The Effect of SiC-MOSFET Characteristics on the Performance of Dielectric Barrier Discharge Plasma Actuators with Two-Stroke Charge Cycle Operation
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DOI：
10.3390/act11110333
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发表时间：
2022-11
期刊：
影响因子：
2.6
通讯作者：
Shintaro Sato;T. Yoshikawa;N. Ohnishi
中科院分区：
文献类型：
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作者：
Shintaro Sato;T. Yoshikawa;N. Ohnishi
介质阻挡放电（DBD）等离子体激励器的低电压工作特性和简单的电路结构使其具有工业应用的潜力。然而，存在低电压操作的DBD等离子体致动器的效率低于高电压操作的DBD等离子体致动器的效率的问题。在这项研究中，碳化硅（SiC）的金属氧化物半导体场效应晶体管（MOSFET），这是在电路中使用的特性，研究的重点是导通电阻。在我们的实验条件下，SiC-MOSFET的导通电阻影响施加电压的上升时间。通过向DBD等离子体致动器施加脉冲电压的能量消耗随着导通电阻的增加而增加。粒子图像测速仪测量的流动显示表明，与SiC-MOSFET的导通电阻是最低的DBD等离子体激励器诱导的离子风的最高速度。此外，就推力-功率比而言，低导通电阻是优选的。这些研究结果有助于开发一个最佳的电源DBD等离子体执行器的工业应用。
The low-voltage operation of a dielectric-barrier-discharge (DBD) plasma actuator with a simple electric circuit has the potential to put it into industrial applications. However, there is an issue that the efficiency of the low-voltage operated DBD plasma actuator is lower than that of the high-voltage operated one. In this study, the characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), which are used in the electric circuit, are investigated with a focus on the on-state resistance. The on-state resistance of the SiC-MOSFET affects the rise time of the applied voltage in our experimental condition. The energy consumption by applying a pulse voltage to the DBD plasma actuator increases with increasing the on-state resistance. Flow visualization with particle image velocimetry measurement reveals that a DBD plasma actuator with the SiC-MOSFET whose on-state resistance is the lowest induces the highest velocity of the ionic wind. Also, low on-state resistance is preferable in terms of the thrust-to-power ratio. These findings contribute to the development of an optimal power supply for DBD plasma actuators for industrial applications.