Characterization of a Sol-Gel Derived Pb(Zr, Ti)O3 Thin-Film Capacitor with Polycrystalline SrRuO3 Electrodes
Characterization of a Sol-Gel Derived Pb(Zr, Ti)O3 Thin-Film Capacitor with Polycrystalline SrRuO3 Electrodes
复制标题
具有多晶 SrRuO3 电极的溶胶-凝胶衍生 Pb(Zr, Ti)O3 薄膜电容器的表征
DOI：
10.1143/jjap.36.l690
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发表时间：
1997
影响因子：
1.5
通讯作者：
Yukio Nishimura
中科院分区：
文献类型：
--
作者：
K. Aoki;I. Murayama;Yukio Nishimura
研究了反应溅射法制备多晶SrRuO3电极的溶胶-凝胶型Pb(Zr, TiO)3薄膜电容器的性能。由于Pb(Zr, Ti)O3在与SrRuO3的界面处成核，在SrRuO3衬底上形成了具有柱状晶粒结构的单一钙钛矿相Pb(Zr, Ti)O3薄膜。采用SrRuO3上下电极的Pb(Zr, Ti)O3电容器表现出优异的电学性能。±5.0 V时，漏电流密度约为1×10-7 A/cm2。该电容器在施加3.0 V电压时表现出良好的可逆性。3.0 V时的剩余极化密度为14.3µc/cm2。在1×1010的开关循环之前，没有观察到剩余极化密度的退化。多晶SrRuO3薄膜有望成为Pb(Zr, Ti)O3电容器电极材料的良好候选材料。
The characteristics of a sol-gel derived Pb(Zr, TiO)3 thin-film capacitor with polycrystalline SrRuO3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr, Ti)O3 film with columnar grain structure was formed on SrRuO3 substrates since nucleation of Pb(Zr, Ti)O3 took place at the interface with SrRuO3. A Pb(Zr, Ti)O3 capacitor with top and bottom SrRuO3 electrodes showed excellent electrical properties. Leakage current densities were around 1×10-7 A/cm2 at ±5.0 V. The capacitor exhibited good reversibility at an applied voltage of 3.0 V. Remanent polarization density for 3.0 V was 14.3 µc/cm2. Degradation of remanent polarization density was not observed up to switching cycles of 1×1010. Polycrystalline SrRuO3 thin film is expected to be a good candidate for the electrode material of Pb(Zr, Ti)O3 capacitors.