Patterning of dielectric oxide thin layers by microcontact printing of self-assembled monolayers
Patterning of dielectric oxide thin layers by microcontact printing of self-assembled monolayers
复制标题
通过自组装单层微接触印刷形成介电氧化物薄层图案
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
D. A. Payne
中科院分区：
文献类型：
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作者：
N. L. Jeon;P. Clem;R. Nuzzo;D. A. Payne
该通讯描述了一种使用微接触印刷（μCP）和溶胶-凝胶沉积来图案化氧化物薄层的技术。该技术涉及在各种基材（SiO_2/Si、蓝宝石、ITO 和玻璃）上沉积烷基硅氧烷自组装单层 (SAM)，然后从溶胶-凝胶前体沉积氧化物薄层。氧化物层从 SAM 衍生化区域分层允许在未衍生化区域上选择性沉积晶体介电氧化物层。为了证明该技术在集成微电子和光学应用中的可行性，在蓝宝石、硅和氧化铟锡 (ITO) 基板上沉积了图案化 (Pb,La)TiO_3 (PLT) 和 LiNbO_3 层。使用晶格匹配的衬底可以实现图案化异质外延氧化物层的无光刻沉积。在蓝宝石上制备横向尺寸为4μm的异质外延LiNbO_3带状波导。还报告了 ITO 上图案化 PLT 薄层的介电测量。
This communication describes a technique used to pattern oxide thin layers using microcontact printing (μCP) and sol-gel deposition. The technique involves μCP of self-assembled monolayers (SAM’s) of alkylsiloxane on various substrates (SiO_2/Si, sapphire, ITO, and glass), followed by deposition of oxide thin layers from sol-gel precursors. Delamination of oxide layers from SAM-derivatized regions allows selective deposition of crystalline dielectric oxide layers on underivatized regions. To demonstrate the viability of this technique for integrated microelectronics and optics applications, patterned (Pb,La)TiO_3 (PLT) and LiNbO_3 layers were deposited on sapphire, silicon, and indium tin oxide (ITO) substrates. Use of lattice-matched substrates allows lithography-free deposition of patterned heteroepitaxial oxide layers. Strip waveguides of heteroepitaxial LiNbO_3 with 4 μm lateral dimensions were fabricated on sapphire. Dielectric measurements for patterned PLT thin layers on ITO are also reported.