Near-surface InAs/GaAs quantum dots with sharp electronic shells
Near-surface InAs/GaAs quantum dots with sharp electronic shells
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具有尖锐电子壳层的近表面 InAs/GaAs 量子点
DOI：
10.1063/1.126450
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发表时间：
2000
影响因子：
4
通讯作者：
S. Fafard
中科院分区：
文献类型：
--
作者：
S. Fafard
利用具有明确电子壳层的近表面量子点系综研究了零维态与表面态之间的相互作用。当量子点与表面的距离从100 nm增加到5.0 nm时，自组装InAs/GaAs量子点的非均匀展宽从1.30 MeV增加到1.46 MeV以上。同时，观察到辐射复合强度降低了约1.3个数量级，红移约1.65 meV。 对于小于100 nm的量子点，量子点和表面态之间的显着电荷转移导致光学记忆效应持续几分钟的时间尺度。
The interaction between zero-dimensional states and surface states is studied using near-surface quantum dot (QD) ensembles with well-defined electronic shells. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ∼30 to more than ∼46 meV as the distance of the QDs from the surface is changed from 100 to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ∼3 orders of magnitude, and a red-shift of ∼65 meV are observed. For QDs capped with less than ∼10 nm, remarkable charge transfers between the QD and surface states lead to optical memory effects lasting over time-scales of several minutes.