CORROSION OF III-V-COMPOUNDS - A COMPARATIVE-STUDY OF GAAS AND INP .2. REACTION SCHEME AND INFLUENCE OF SURFACE-PROPERTIES
CORROSION OF III-V-COMPOUNDS - A COMPARATIVE-STUDY OF GAAS AND INP .2. REACTION SCHEME AND INFLUENCE OF SURFACE-PROPERTIES
复制标题
DOI：
10.1016/0022-0728(91)85004-9
复制
发表时间：
1991-11-12
影响因子：
4.5
通讯作者：
BLONKOWSKI, S
中科院分区：
文献类型：
--
作者：
ALLONGUE, P;BLONKOWSKI, S
本文提出了一个详细的反应模型的III-V族化合物的腐蚀，定量表示的实验数据（主要是塔菲尔图的电流与带位移），在第一部分J.电子。这样的数据允许不同反应方案之间的区别。 从物理的角度来看，该模型清楚地表明，GaAs和InP之间观察到的差异产生于它们不同的电子表面性质。 从化学的角度来看，提出了GaAs腐蚀状态的化学特征：状态E（c）- 0.98 eV和E（c）- 1.15 eV，之前从光电容光谱学中推导出，Ber。包子Phys.Chem.92（1988）895中所述，可以分别与As位点和Ga位点相关联。 类似的描述适用于InP，具有不同的状态位置。 在这些原始数据的框架内，腐蚀可以通过阳离子位点上的第一空穴捕获过程来描述，该阳离子位点通过阳离子的释放而变成阴离子位点。 在第二空穴捕获进行之前发生化学反应步骤以溶解阴离子相关缺陷。 这样的描述是预测的实验数据，并进一步支持实验事实，如众所周知的GaAs表面在酸性介质中的富集。
The paper presents a detailed reaction model for the corrosion of III-V compounds which quantitatively represents the experimental data (mainly Tafel plots of current vs. band displacement), presented in Part I J. Electronal. Chem. Such data allow the discrimination between different reaction schemes. From a physical point of view, the model shows clearly that the differences observed between GaAs and InP arise from their different electronic surface properties. From a chemical point of view, a chemical signature of the corrosion states of GaAs is proposed: the states E(c) - 0.98 eV and E(c) - 1.15 eV, previously derived from photocapacitance spectroscopy, Ber. Bunsenges. Phys. Chem. 92 (1988) 895, could be associated with As sites and Ga sites, respectively. An analogous description holds for InP, with different positions of states. Within the framework of these original data, corrosion can be described by a first hole capture process on the cation site which becomes an anion site by the liberation of the cation. A chemical reaction step occurs before the second hole capture proceeds to dissolve the anion-related defect. Such a description is predicted by thermodynamical data and is further sustained by experimental facts such as the well-known As enrichment of GaAs surface in acidic media.