A corrugated capacitor cell (CCC) for megabit dynamic MOS memories
A corrugated capacitor cell (CCC) for megabit dynamic MOS memories
复制标题
用于兆位动态 MOS 存储器的波纹电容器单元 (CCC)
DOI：
10.1109/edl.1983.25659
复制
发表时间：
1983
影响因子：
4.9
通讯作者：
S. Asai
中科院分区：
文献类型：
--
作者：
H. Sunami;T. Kure;N. Hashimoto;K. Itoh;T. Toyabe;S. Asai
一种新的dRAM单元命名为“CCC”（波纹电容器单元）已成功开发的基础上的一个设备单元的概念。这种CCC的特点是由一个蚀刻护城河存储电容器延伸到衬底中，导致在存储电容几乎独立的增加，而没有单元尺寸扩大。使用4 × 8 µm2CCC获得的典型值为45 fF，该CCC具有2.5 µm深的沟槽和相当于15 nm SiO2 in厚度的电容器绝缘体。在32千位dRAM操作中，利用具有128位相同CCC的折叠位线布置实现200 mV的信号。CCC的概念是有前途的一代1兆位dRAM的和超越。
A new dRAM cell named "CCC" (Corrugated Capacitor Cell) has been successfully developed based on the one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in an almost independent increase in storage capacitance without cell size enlargement. A typical value of 45 fF has been obtained with 4 × 8 µm2CCC having a 2.5-µm deep moat and a capacitor insulator equivalent to 15 nm SiO2in thickness. A signal of 200 mV is realized in 32 kbit dRAM operation with a folded-bit line arrangement having 128 bit identical CCC's. The CCC concept is promising for generations of 1 Mbit dRAM's and beyond.