Spectral hole‐burning and gain saturation in semiconductor lasers: Strong‐signal theory
Spectral hole‐burning and gain saturation in semiconductor lasers: Strong‐signal theory
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半导体激光器中的光谱烧孔和增益饱和：强信号理论
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
G. Agrawal
中科院分区：
文献类型：
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作者：
G. Agrawal
半导体增益介质的非线性极化率是通过在密度矩阵形式主义中包含带内载流子弛豫的影响来获得的。利用该结果得到了光学增益和折射率随激光功率增加的近似解析表达式。折射率变化通常很小，但可以是正的或负的，这取决于激射模式位于增益峰值的哪一侧。相比之下，由于光谱烧孔，增益总是降低。本文讨论了增益饱和对半导体激光器动态响应的影响以及实验验证的可能性。
The nonlinear susceptibility of semiconductor gain media is obtained by including the effect of intraband carrier relaxation within the density‐matrix formalism. The result is used to obtain the approximate analytic expressions showing how the optical gain and the refractive index change with an increase in the laser power. The index change is generally small but can be positive or negative depending on which side of the gain peak the lasing mode is located. By contrast, the gain is always reduced because of spectral hole‐burning. The implications of gain saturation on the dynamic response of semiconductor lasers are discussed together with the possibility of experimental verification.