Electrical transport measurements on single-walled carbon nanotubes
Electrical transport measurements on single-walled carbon nanotubes
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DOI：
10.1007/s003390051004
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发表时间：
1999-09
期刊：
影响因子：
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通讯作者：
J. Nygård;D. Cobden;M. Bockrath;P. McEuen;P. Lindelof
中科院分区：
文献类型：
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作者：
J. Nygård;D. Cobden;M. Bockrath;P. McEuen;P. Lindelof
我们回顾了金属电极接触的单壁碳纳米管的传输测量。在室温下，一些器件的晶体管行为类似于 p 沟道场效应晶体管，而其他器件则表现为与栅极电压无关的导线。在低温下，传输通常以库仑封锁为主。在这种情况下，可以研究有限长度管的量子本征态。在较高温度下，可以观察到电导对温度和偏置的依赖性的幂律行为。这与在纳米管中隧道进入一维卢廷格液体是一致的。我们还讨论了接触纳米管的最新进展，这应该很快就能研究它们的固有传输特性。
We review transport measurements on single-walled carbon nanotubes contacted by metal electrodes. At room temperature some devices show transistor action similar to that of p-channel field effect transistors, while others behave as gate-voltage independent wires. At low temperatures transport is usually dominated by Coulomb blockade. In this regime the quantum eigenstates of the finite-length tubes can be studied. At higher temperatures power law behaviour is observed for the temperature and bias dependence of the conductance. This is consistent with tunneling into a one-dimensional Luttinger liquid in a nanotube. We also discuss recent developments in contacting nanotubes which should soon allow study of their intrinsic transport properties.