Performance of (110) P-channel SOI-MOSFETs Fabricated by Deep-Amorphization and Solid-Phase Epitaxial Regrowth Processes
Performance of (110) P-channel SOI-MOSFETs Fabricated by Deep-Amorphization and Solid-Phase Epitaxial Regrowth Processes
复制标题
采用深非晶化和固相外延再生长工艺制造的 (110) P 沟道 SOI-MOSFET 的性能
作者：
A.Ohata Y.Bae;C.Fenouillet-Beranger;S.Cristoloveanu;A.Ohata
