Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
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DOI：
10.1063/1.1411985
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发表时间：
2001-10-15
影响因子：
4
通讯作者：
Song, IJ
中科院分区：
文献类型：
--
作者：
Moore, WJ;Freitas, JA;Song, IJ
报道了两种非故意掺杂的高质量氢化物气相外延GaN外延片的红外施主杂质激发谱。在两个晶片中都观察到了两个先前观察到的浅施主，我们将其命名为N1和N2。然而，一个晶片的光谱由N1主导，另一个晶片的光谱由氮气主导。通过红外和二次离子质谱图数据的比较，可以确定N1为Si，N2为O。硅是这些样品中最浅的未补偿施主，在独立的三星晶片中的激活能为30.18+/-0.1 meV。O的活化能为33.20+/-0.1 meV。还观察到一个活化能为31.23+/-0.1 meV的未知第三施主。O(C)2001美国物理研究所的积分吸收截面为8.5x10(-14)cm和8.6x10(-14)cm。
Donor impurity excitation spectra in the infrared from two high-quality, not-intentionally doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed shallow donors which we designate N1 and N2 were observed in both wafers. However, spectra of one wafer are dominated by N1 and spectra of the other by N2. A comparison of infrared and secondary ion mass spectroscopic data allows identification of N1 as Si and N2 as O. Silicon is the shallowest uncompensated donor in these samples with an activation energy of 30.18 +/-0.1 meV in the freestanding Samsung wafer. The activation energy of O is found to be 33.20 +/-0.1 meV. An unidentified third donor with an activation energy of 31.23 +/-0.1 meV also was observed. Integrated absorption cross sections are found to be 8.5x10(-14) cm for Si and 8.6x10(-14) cm for O. (C) 2001 American Institute of Physics.