Thermal oxidation of CdTe surfaces and the properties of MOS diodes
Thermal oxidation of CdTe surfaces and the properties of MOS diodes
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DOI：
10.1016/0168-9002(89)91370-3
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发表时间：
1989-11
影响因子：
1.4
通讯作者：
M. Suita;T. Taguchi
中科院分区：
文献类型：
--
作者：
M. Suita;T. Taguchi
The thermal oxidation surfaces of p-type (110) CdTe bulk crystals have been characterised by means of X-ray photoelectron spectra (XPS) and 4.2 K photoluminescence measurements. The XPS spectral analysis demonstrates that there exist several different charge states of Te which can be bound to oxygen, and consequently that CdTeO3is considered to be a major constituent on the oxide surfaces. A thermally oxidized (110) CdTe surface exhibits excellent excitonic characteristics, particularly resulting in polariton luminescence. Utilising the thermal oxide layers, a metal—oxide-p-CdTe (MOS) structure was fabricated and its diode characteristics were investigated by capacitance methods.
