Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy
Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy
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DOI：
10.1063/1.1599979
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发表时间：
2003-08
影响因子：
3.2
通讯作者：
K. Jeganathan;T. Ide;M. Shimizu;H. Okumura
中科院分区：
文献类型：
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作者：
K. Jeganathan;T. Ide;M. Shimizu;H. Okumura
讨论了等离子体辅助分子束外延生长的AlN/GaN异质界面二维电子气的生长和输运性质。发现片状载流子密度高度依赖于在掺杂或未掺杂GaN层上生长的AlN的势垒厚度。随着半绝缘GaN层上的AlN势垒厚度由于自发和压电极化而从15 A增加到25 A，载体片密度从0.8×1012单调增加到1.1×1013 cm-2。在n-GaN上生长的厚度为35埃的AlN势垒层给出了最高的片状载流子密度，为4.3×1013 cm-2。在薄的AlN阻挡层中，由于表面耗尽，片状载流子密度低。
We discuss the growth and transport properties of two-dimensional electron gas confined at the AlN/GaN heterointerface grown by plasma-assisted molecular-beam epitaxy. The sheet carrier density was found to be highly dependent on the barrier thickness of AlN grown on a doped or undoped GaN layer. The carrier sheet density monotonously increased from 0.8×1012 to 1.1×1013 cm−2 as the AlN barrier thickness on a semi-insulating GaN layer increased from 15 to 25 A due to spontaneous and piezoelectric polarization. An AlN barrier of 35 A in thickness grown on n-GaN gave the highest sheet carrier density, which was 4.3×1013 cm−2. In thin AlN barrier layers, the sheet carrier density was low due to surface depletion.