Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties
Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties
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DOI：
10.1143/jjap.35.1560
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发表时间：
1996-02
影响因子：
1.5
通讯作者：
Wenbiao Wu;K. Fumoto;Y. Oishi;M. Okuyama;Y. Hamakawa
中科院分区：
文献类型：
--
作者：
Wenbiao Wu;K. Fumoto;Y. Oishi;M. Okuyama;Y. Hamakawa
在300 ~ 500℃的温度下，采用激光烧蚀法在SiO2 /Si和Pt基底上生长钛酸铋薄膜，并对其结构和电学性能进行了研究。Pt或Bi2Ti2O7（BTO）缓冲层在Si衬底上制备的薄膜具有c轴和（117）取向，尽管Pt和SiO2/Si衬底上的薄膜分别优先沿c轴和（117）方向取向。在SiO2/Si和BTO/Si上观察到钛酸铋薄膜的电容-电压滞回，与薄膜的铁电滞回相对应。钛酸铋薄膜在Pt和BTO/Si衬底上的电流-电压特性显示出低泄漏电流。
Bismuth titanate thin films are grown on SiO2 /Si and Pt substrates at temperatures of 300–500°C by the laser ablation method, and their structural and electrical properties investigated. The films prepared on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO2/Si substrates orient preferentially along the c-axis and (117) direction, respectively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film. Current-voltage characteristics of bismuth titanate films on Pt and BTO/Si substrates show low leakage current.