Electrical charge state identification and control for the silicon vacancy in 4H-SiC
Electrical charge state identification and control for the silicon vacancy in 4H-SiC
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DOI：
10.1038/s41534-019-0227-y
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发表时间：
2019-12-04
影响因子：
7.6
通讯作者：
Vines, L.
中科院分区：
文献类型：
--
作者：
Bathen, M. E.;Galeckas, A.;Vines, L.
可靠的单光子发射是实现高效自旋光子纠缠和可扩展量子信息系统的关键。4H-SiC中的硅空位（V-Si）是一种很有前途的单光子发射体，具有毫秒级的自旋相干时间，但受到光子计数低的困扰，并且只有一个电荷态保留了所需的自旋和光学性质。在这里，我们证明了V-Si缺陷集成的发射可以通过制造肖特基势垒二极管提高一个数量级，并且通过施加外部偏置可以连续调制近50%。此外，我们通过相关的光学和电学测量来识别V-Si的电荷态跃迁，并实现了亮态的选择性填充。最后，我们揭示了V（Si）的V1发射线状态在较大电场下明显的Stark位移为55 GHz，这为修改单光子发射提供了一种手段。本文提出的方法为获得完全控制和大幅增强量子应用的4H-SiC中V（Si）缺陷系综的发射铺平了道路。
Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (V-Si) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from V-Si defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost 50% via application of external bias. Furthermore, we identify charge state transitions of V-Si by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1' emission line state of V(Si )at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, V(Si )defect ensembles in 4H-SiC highly suitable for quantum applications.