Contribution of the x‐ray absorption spectroscopy to study TiO2 thin films prepared by ion beam induced chemical vapor deposition
Contribution of the x‐ray absorption spectroscopy to study TiO2 thin films prepared by ion beam induced chemical vapor deposition
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X 射线吸收光谱对研究离子束诱导化学气相沉积制备的 TiO2 薄膜的贡献
DOI：
10.1063/1.359043
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发表时间：
1995
影响因子：
3.2
通讯作者：
A. Gonzalez
中科院分区：
文献类型：
--
作者：
A. Caballero;D. Leinen;Asunción Fernández;Á. Justo;J. Espinós;A. Gonzalez
制备了TiO2薄膜，并利用x射线衍射仪（XRD）分析了其掠光角和x射线吸收光谱（EXAFS/XANES）。沉积方法是离子束诱导的化学气相沉积过程（IBICVD），包括用加速的O+2离子轰击衬底，同时挥发性金属前驱体的蒸气定向在其表面。薄膜的结构取决于衬底类型（玻璃、熔融石英和蓝宝石）和制备条件（衬底温度和光束能量为1或10 keV）。因此，在玻璃和二氧化硅/蓝宝石上，当衬底在制备过程中处于300 K时，形成非晶结构，如果衬底在沉积过程中处于573 K，或者当使用10 keV离子时，甚至更大程度地获得富含金红石的结构。在773 K下煅烧后，在玻璃表面生长的非晶态薄膜的锐钛矿收率为100%。蓝宝石的结晶不太完美，除锐钛矿外，…
TiO2 thin films have been prepared and their structure analyzed by XRD at grazing angles and x‐ray absorption spectroscopies (EXAFS/XANES). The deposition method is an ion beam induced chemical vapor deposition procedure (IBICVD) consisting of the bombardment of a substrate with accelerated O+2 ions while the vapor of a volatile metallic precursor is directed on its surface. The structure of the films was dependent on the type of substrate (glass, fused quartz, and sapphire) and on the conditions used for their preparation (temperature of substrate and beam energy of 1 or 10 keV). Thus, while on glass and silica/sapphire, an amorphous structure is formed when the substrate is at 300 K during preparation, a rutile‐rich structure is obtained if the substrate is at 573 K during deposition or, even to a larger degree, when using ions of 10 keV. The amorphous structure of the films grown on glass yield 100% anatase after calcining at 773 K. On sapphire, the crystallization was less perfect and besides anatase,...