Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard
Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard
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DOI：
10.1109/tim.2015.2418452
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发表时间：
2015-05
影响因子：
5.6
通讯作者：
S. Nakamura;Y. Pashkin;J. Tsai;N. Kaneko
中科院分区：
文献类型：
--
作者：
S. Nakamura;Y. Pashkin;J. Tsai;N. Kaneko
作为实现量子电流标准的一步，进行了平行SINIS旋转门的单电子泵浦。在同一芯片上制作了11个SINIS旋转门，并逐一增加了运营的SINIS旋转门数量。结果，11个旋转门同时工作，频率高达100 MHz，产生176.2 pA的泵浦直流。我们还对并行化进行了线性检查。本文通过并联化增加泵浦电流，将导致实际使用的稳定和准确的直流电源与微小值的输出电流和计量三角形实验SI重新定义。
As a step toward realizing the quantum current standard, single-electron pumping of parallel SINIS turnstiles was performed. Eleven SINIS turnstiles were fabricated on the same chip, and the number of operating SINIS turnstiles was increased one by one. As a result, 11 turnstiles were operated simultaneously up to 100 MHz, resulting in a pumped dc of 176.2 pA. We also did a linearity check toward parallelization. This paper for increasing the pumped current by parallelization will lead to practical use of stable and accurate dc sources with tiny values of the output current and the metrology triangle experiment for SI redefinition.