Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision
Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision
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DOI：
10.1038/s42005-019-0253-2
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发表时间：
2019-11-28
影响因子：
5.5
通讯作者：
Nishikino, Masaharu
中科院分区：
文献类型：
--
作者：
Thanh-Hung Dinh;Medvedev, Nikita;Nishikino, Masaharu
固体材料与高能光子或其他粒子（如电子和离子）的聚焦、强脉冲的相互作用在极短的时间内和超小的空间尺度上产生强电子激发态。这为在小于纳米的空间尺度上控制材料的响应提供了可能性，这对下一代纳米器件至关重要。我们利用SACLA自由电子激光器产生的飞秒极紫外光脉冲在硅衬底表面形成了环形山。我们调查所产生的表面改性损伤阈值附近，建立连接到微观理论方法，并在他们的帮助下，说明物理机制的损害创建。在烧蚀期间通过快速电子和能量传输进行的冷却可以抑制不期望的流体动力学运动，从而允许以达到原子力显微镜的可观察极限的精度直接处理硅材料。
Interaction of a solid material with focused, intense pulses of high-energy photons or other particles (such as electrons and ions) creates a strong electronic excitation state within an ultra-short time and on ultra-small spatial scales. This offers the possibility to control the response of a material on a spatial scale less than a nanometer-crucial for the next generation of nano-devices. Here we create craters on the surface of a silicon substrate by focusing single femtosecond extreme ultraviolet pulse from the SACLA free-electron laser. We investigate the resulting surface modification in the vicinity of damage thresholds, establishing a connection to microscopic theoretical approaches, and, with their help, illustrating physical mechanisms for damage creation. The cooling during ablation by means of rapid electron and energy transport can suppress undesired hydrodynamical motions, allowing the silicon material to be directly processed with a precision reaching the observable limitation of an atomic force microscope.