Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature
Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature
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DOI：
10.1016/s0040-6090(02)01184-7
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发表时间：
2003-03-03
期刊：
影响因子：
2.1
通讯作者：
Martins, R
中科院分区：
文献类型：
--
作者：
Assunçao, V;Fortunato, E;Martins, R
高导电且透明的掺镓氧化锌薄膜已通过射频沉积以高生长速率沉积。室温下在廉价的钠钙玻璃基板上进行磁控溅射。氩溅射压力在 0.15 至 2.1 Pa 之间变化。最低电阻率为 2.6 X 10(-4) Omega cm（薄层电阻 = 6 Omega/sq.，厚度 = 600 nm），是在 0.15 Pa 的氩溅射压力和 r.f. 条件下获得的。功率为 175 W 该薄膜在可见光谱中的总透射率约为 90%。较高溅射压力下电阻率的增加是由于迁移率和载流子浓度的降低，并且与表面形态的变化相关。通过高生长速率（290埃/分钟）和室温沉积实现低电阻率，使这些薄膜能够沉积到用于柔性光电器件的聚合物基板上。 (C) 2002 Elsevier Science B.V. 保留所有权利。
Highly conducting and transparent gallium doped zinc oxide thin films have been deposited at high growth rates by r.f. magnetron sputtering at room temperature on inexpensive soda lime glass substrates. The argon sputtering pressure was varied between 0.15 and 2.1 Pa. The lowest resistivity was 2.6 X 10(-4) Omega cm (sheet resistance = 6 Omega/sq. for a thickness = 600 nm) and was obtained at an argon sputtering pressure of 0.15 Pa and a r.f. power of 175 W The films present an overall transmittance in the visible spectra of approximately 90%. The increase on the resistivity for higher sputtering pressures is due to a decrease of both, mobility and carrier concentration, and is associated to a change on the surface morphology. The low resistivity, accomplished with a high growth rate (290 Angstrom/min) and with a room temperature deposition enables these films deposition onto polymeric substrates for flexible optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.