On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes
On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes
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DOI：
10.1002/mop.28681
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发表时间：
2014-11
影响因子：
1.5
通讯作者：
J. Glover;A. Khalid;D. Cumming;M. Bajo;M. Kuball;A. Stephen;G. Dunn;C. Oxley
中科院分区：
文献类型：
--
作者：
J. Glover;A. Khalid;D. Cumming;M. Bajo;M. Kuball;A. Stephen;G. Dunn;C. Oxley
微型砷化铝镓/砷化镓（AlGaAs/GaAs）冷却器在晶片上制造，使不同的接触几何形状，以实现在同一工艺运行。为了单独地DC偏置微冷却器，使用微探针，导致冷却器的热负荷。开发了一种简单的实验技术来验证冷阴极和热阳极接触之间的温度差（ΔT）是由于冷却器的冷却而不是加热。© 2014 Wiley Periodicals，Inc.微波光学技术快报56：2699-2700，2014
Miniature aluminium gallium arsenide/gallium arsenide (AlGaAs/GaAs) coolers were fabricated on wafer, enabling different contact geometries to be realized in the same process run. To individually DC bias the microcooler, microprobes were used leading to thermal loading of the cooler. A simple experimental technique was developed to verify the temperature difference (ΔT) between the cold cathode and hot anode contacts is due to cooling rather than heating of the cooler. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2699–2700, 2014