Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode
Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode
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DOI：
10.1063/1.2219141
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发表时间：
2006-07
影响因子：
4
通讯作者：
M. Kohda;T. Kita;Y. Ohno;F. Matsukura;H. Ohno
中科院分区：
文献类型：
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作者：
M. Kohda;T. Kita;Y. Ohno;F. Matsukura;H. Ohno
我们通过使用集成 (Ga,Mn)As ED 和发光二极管 (LED) 的三端器件研究了 (Ga,Mn)As∕n+-GaAs Esaki 二极管 (ED) 中自旋极化电子的注入。 LED 的电致发光偏振 (PEL) 在法拉第配置下测量，作为独立施加到 Esaki 二极管和 LED 的偏置电压的函数。当 (Ga,Mn)As 费米能级附近的价电子弹道注入 LED 时，观察到最大 PEL 为 32.4%。
We investigated injection of spin polarized electrons in a (Ga,Mn)As∕n+-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.