Bilayer Graphene Transistors for Analog Electronics
Bilayer Graphene Transistors for Analog Electronics
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DOI：
10.1109/ted.2014.2302382
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发表时间：
2014-03-01
影响因子：
3.1
通讯作者：
Iannaccone, Giuseppe
中科院分区：
文献类型：
--
作者：
Fiori, Gianluca;Neumaier, Daniel;Iannaccone, Giuseppe
在本文中，我们研究与理论和实验的性能改善，可实现使用双层石墨烯作为沟道材料的场效应晶体管模拟应用。双层石墨烯提供比单层石墨烯更大的输出电阻，这转化为更高的电压增益和更高的最大频率振荡。为了在实验上证明双层石墨烯作为沟道材料的潜力，已经制造和测试了简单的电路，即，放大器和倍频器。我们表明，它们在很大程度上优于用单层石墨烯器件构建的类似电路。
In this paper, we investigate with theory and experiments the performance improvements achievable using bilayer graphene as channel material in field effect transistors for analog applications. Bilayer graphene provides larger output resistance than monolayer graphene, which translates in both higher voltage gain and higher maximum frequency oscillation. To experimentally prove bilayer graphene potential as a channel material, simple circuits have been fabricated and tested, i.e., an amplifier and a frequency doubler. We show that they largely outperform similar circuits built with monolayer-graphene devices.