STRAIN RELAXATION IN HEXAGONALLY CLOSE-PACKED METAL-METAL INTERFACES
STRAIN RELAXATION IN HEXAGONALLY CLOSE-PACKED METAL-METAL INTERFACES
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DOI：
10.1103/physrevlett.74.754
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发表时间：
1995-01-30
影响因子：
8.6
通讯作者：
BEHM, RJ
中科院分区：
文献类型：
--
作者：
GUNTHER, C;VRIJMOETH, J;BEHM, RJ
对外延Cu/Ru（0001）的扫描隧道显微镜观察表明，随着膜厚的增加，（拉伸）晶格应变的弛豫发生在四个不同的阶段，从赝晶到单向收缩到（准）各向同性收缩的膜结构，随着晶格应变的减小和界面能的增加。在生长过程中，下面的膜层重新排列。与其他数据的比较表明，该计划是更普遍有效的拉伸，并略有修改，也压缩应变松弛在六角密堆积的金属表面和金属-金属界面。
Scanning tunneling microscopy observations on epitaxial Cu/Ru (0001) show the relaxation of (tensile) lattice strain to occur in four different stages with increasing film thickness, from pseudomorphic to unilaterally contracted to (quasi-) isotropically contracted film structures, with decreasing lattice strain and increasing interface energy. The underlying film layers rearrange during growth. Comparison with other data suggests this scheme to be more generally valid for tensile and, with slight modifications, also compressive strain relaxation in hexagonally close-packed metal surfaces and metal-metal interfaces.