Three-dimensional SiO2 surface structures fabricated using femtosecond laser lithography
Three-dimensional SiO2 surface structures fabricated using femtosecond laser lithography
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DOI：
10.1007/s00339-009-5446-1
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
M. Mizoshiri;Hiroaki Nishiyama;J. Nishii;Y. Hirata
中科院分区：
文献类型：
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作者：
M. Mizoshiri;Hiroaki Nishiyama;J. Nishii;Y. Hirata
我们报道了利用飞秒激光光刻辅助微加工技术制作三维（3-D）SiO2表面，该技术是一种非线性光刻和等离子体刻蚀的组合工艺。利用飞秒激光诱导非线性吸收写入光刻胶结构的图形转移技术，获得了具有三维表面的SiO2基菲涅耳透镜阵列。利用开放孔径扫描法，在单光子吸收可以忽略的情况下，估算出KMPR抗蚀剂的飞秒激光双光子吸收系数为17-23 cm/TW。通过在图案转移过程中向蚀刻气体（CHF 3）中添加O2，转移结构的表面粗糙度降低到RMS 16.90 nm，这对应于不添加O2的四分之一。当632.8nm波长的光耦合到具有三维表面的透镜时，焦距被测量为2790 μm，这与理论值很好地一致。
We report the fabrication of three-dimensional (3-D) SiO2surfaces using femtosecond-laser lithography-assisted micromachining, which is a combined process of nonlinear lithography and plasma etching. Using pattern transfer of photoresist structures written by femtosecond laser-induced nonlinear absorption, SiO2-based Fresnel lens arrays with 3-D surfaces were obtained for this study. Using the open-aperturez-scan method, the femtosecond laser two-photon absorption coefficient of the KMPR resist was estimated as 17–23 cm/TW, assuming that single-photon absorption was negligible. By adding O2to the etching gas (CHF3) during pattern transfer, the surface roughness of the transferred structures was reduced to RMS 16.90 nm, which corresponds to one quarter of that without adding O2. When 632.8-nm-wavelength light was coupled to the lenses with 3-D surfaces, the focal length was measured as 2790 μm, which agreed well with the theoretical value.